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TSM10P06 전자부품 데이터시트



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TSM10P06  

Taiwan Semiconductor
Taiwan Semiconductor

TSM10P06

60V P-Channel MOSFET

TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) -60 220 @ VGS = -4.5V -2 RDSON (mΩ) 170 @ VGS = -10V ID (A) -5 Features ● ● Advance Trench Process Technology High Density Cell Design for



TSM10P06CP  

Taiwan Semiconductor
Taiwan Semiconductor

TSM10P06CP

60V P-Channel MOSFET

TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) -60 220 @ VGS = -4.5V -2 RDSON (mΩ) 170 @ VGS = -10V ID (A) -5 Features ● ● Advance Trench Process Technology High Density Cell Design for



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