TSM10N60
Taiwan Semiconductor Company
600V N-Channel Power MOSFETPreliminary TSM10N60 600V N-Channel Power MOSFET
ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
0.75 @ VGS =10V
ID (A)
4.75
General Description
The TSM10N60 N-Channel enhancement mode Power MO
TSM10N80CZ
800V N-Channel Power MOSFETTSM10N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
800 1.05 @ VGS =10V
ID (A)
9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced t
Taiwan Semiconductor
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TSM10N80
800V N-Channel Power MOSFETTSM10N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
800 1.05 @ VGS =10V
ID (A)
9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced t
Taiwan Semiconductor
PDF
TSM10N80CI
800V N-Channel Power MOSFETTSM10N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
800 1.05 @ VGS =10V
ID (A)
9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced t
Taiwan Semiconductor
PDF