Datasheet TSHG8400 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSHG8400	High Speed Infrared Emitting Diode www.DataSheet.co.kr TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High ra	Vishay Siliconix

TSHG8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSHG8400	High Speed Infrared Emitting Diode Datasheet.es TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High	Vishay Siliconix
TSHG8200	High Speed Infrared Emitting Diode Datasheet.es TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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