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Datasheet TSHG5510 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TSHG5510 | High Speed Infrared Emitting Diode www.DataSheet.co.kr
TSHG5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm |
Vishay Siliconix |
TSHG5 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TSHG5510 | High Speed Infrared Emitting Diode |
Vishay Siliconix |
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TSHG5410 | High Speed Infrared Emitting Diode |
Vishay Siliconix |
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TSHG5210 | High Speed Infrared Emitting Diode |
Vishay Siliconix |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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