TPC8134 전자부품 데이터시트

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.)

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.) Low

TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8113 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switc

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: ID

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPC8112 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (