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TN28F020-120  

Intel Corporation
Intel Corporation

TN28F020-120

28F020 2048K (256K X 8) CMOS FLASH MEMORY

E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features  ±10% VCC Tolerance  Maximum Latch-Up Immunity through



TN28F020-120  

Intel Corporation
Intel Corporation

TN28F020-120

28F020 2048K (256K X 8) CMOS FLASH MEMORY

E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features  ±10% VCC Tolerance  Maximum Latch-Up Immunity through



TN28F020-120  

Intel Corporation
Intel Corporation

TN28F020-120

28F020 2048K (256K X 8) CMOS FLASH MEMORY

E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features  ±10% VCC Tolerance  Maximum Latch-Up Immunity through



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