Datasheet TK80E07NE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK80E07NE	Silicon N Channel MOS Type Field Effect Transistor TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current	Toshiba

TK80E0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK80E08K3	Field Effect Transistor Silicon N Channel MOS Type Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : \|Yf	Toshiba
TK80E07NE	Silicon N Channel MOS Type Field Effect Transistor TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z	Toshiba
TK80E06K3A	Silicon N-channel MOS TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 t	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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