Datasheet TK70J04J3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK70J04J3	Field Effect Transistor TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK70J04J3 Motor Drive Application z z z z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhance	Toshiba Semiconductor

TK70J0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK70J04J3	Field Effect Transistor TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK70J04J3 Motor Drive Application z z z z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max)	Toshiba Semiconductor
TK70J06K3	MOSFETs TK70J06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK70J06K3 1. Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA	Toshiba Semiconductor
TK70J04K3Z	MOSFETs TK70J04K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK70J04K3Z 1. Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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