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Datasheet TK65910M Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | TK65910M | SMALL EL LAMP DRIVER TK6591x
SMALL EL LAMP DRIVER FEATURES
s s s s s s s s s s s s s s High Ratio of Brightness / Input Power Constant Brightness Versus Input Supply Changes Optimized for 3.5 nf to 12.5 nf Panel Capacitance Panel Voltage Slew Rates Controlled for Life Enhancement Panel Peak to Peak Voltage Independent o | TOKO | driver |
2 | TK65910MTL | SMALL EL LAMP DRIVER TK6591x
SMALL EL LAMP DRIVER FEATURES
s s s s s s s s s s s s s s High Ratio of Brightness / Input Power Constant Brightness Versus Input Supply Changes Optimized for 3.5 nf to 12.5 nf Panel Capacitance Panel Voltage Slew Rates Controlled for Life Enhancement Panel Peak to Peak Voltage Independent o | TOKO | driver |
TK6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TK60A08J1 | MOSFET, Transistor TK60A08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60A08J1
Switching Regulator Application
• • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfe Toshiba Semiconductor mosfet | | |
2 | TK60D08J1 | Field Effect Transistor TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60D08J1
Switching Regulator Application
• • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transf Toshiba Semiconductor transistor | | |
3 | TK60F08K3 | MOSFET, Transistor TK60F08K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK60F08K3
1. Applications
• • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max Toshiba Semiconductor mosfet | | |
4 | TK60J25D | MOSFET, Transistor TK60J25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK60J25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.0285 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, Toshiba Semiconductor mosfet | | |
5 | TK60P03M1 | MOSFET, Transistor TK60P03M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK60P03M1
1. Applications
• • DC-DC Converters Desktop Computers
2. Features
(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage curr Toshiba Semiconductor mosfet | | |
6 | TK60S06K3L | MOSFET, Transistor TK60S06K3L
MOSFETs Silicon N-channel MOS (U-MOS )
TK60S06K3L
1. Applications
• • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA ( Toshiba Semiconductor mosfet | | |
7 | TK61023 | VOLTAGE DETECTOR TK610xx
ADVANCED INFORMATION FEATURES
s s s s s Very Low Quiescent Current ( 1 µA) No External Components Built In Hysteresis (5% typ.) ±2 % Voltage Detection Accuracy Miniature Package (SOT23-5)
VOLTAGE DETECTOR APPLICATIONS
s s s s s Battery Powered Systems Wireless Telephones Pagers Personal C TOKO detector | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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