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Datasheet TK5A65DA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK5A65DA   MOSFETs

TK5A65DA MOSFETs Silicon N-Channel MOS (π-MOS) TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK5A65DA pdf

TK5A6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK5A60W

MOSFETs

TK5A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5A60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mod
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK5A60D

Field Effect Transistor

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS =
 Toshiba
Toshiba		 datasheet pdf - Toshiba
TK5A65DA

MOSFETs

TK5A65DA MOSFETs Silicon N-Channel MOS (π-MOS) TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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SPS122

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