Datasheet TK55D10J1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK55D10J1	Silicon N Channel MOS Type Field Effect Transistor TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admit	Toshiba Semiconductor

TK55D1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK55D10J1	Silicon N Channel MOS Type Field Effect Transistor TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) • High fo	Toshiba Semiconductor

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