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Datasheet TK50P04M1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK50P04M1 | High-Efficiency DC-DC Converter Applications Switching Regulator TK50P04M1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TK50P04M1
6.6 ± 0.2 5.34 ± 0.13 1.08±0.2
High-Efficiency DC-DC Converter Applications Switching Regulator
• • • • • • High-speed switching Low drain-source ON-resistance: RDS (ON) = |  Toshiba Semiconductor | converter |
TK5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK50A04K3 | MOSFET, Transistor TK50A04K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK50A04K3
1. Applications
• • • Automotive Motor Drivers Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhanc Toshiba Semiconductor mosfet | | |
| 2 | TK50F15J1 | MOSFET, Transistor TK50F15J1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50F15J1
1. Applications
• • Switching Voltage Regulators DC-DC Converters
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) Enhancement mode Toshiba Semiconductor mosfet | | |
| 3 | TK50J30D | MOSFET, Transistor TK50J30D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK50J30D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID Toshiba Semiconductor mosfet | | |
| 4 | TK50J60U | MOSFET, Transistor TK50J60U
MOSFETs Silicon N-Channel MOS (DTMOS)
TK50J60U
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = Toshiba Semiconductor mosfet | | |
| 5 | TK50P03M1 | High-Efficiency DC-DC Converter Applications Desktop PC Applications TK50P03M1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TK50P03M1
High-Efficiency DC-DC Converter Applications Desktop PC Applications
• • • • • • High-speed switching Small gate charge: QSW = 8.2 nC (typ.)
1.01MAX 6.6 ± 0.2 5.34 ± 0.13 1. Toshiba Semiconductor converter | | |
| 6 | TK50P04M1 | High-Efficiency DC-DC Converter Applications Switching Regulator TK50P04M1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TK50P04M1
6.6 ± 0.2 5.34 ± 0.13 1.08±0.2
High-Efficiency DC-DC Converter Applications Switching Regulator
• • • • • • High-speed switching Low drain-source ON-resistance: RDS (ON) = Toshiba Semiconductor converter | | |
| 7 | TK50S04K3L | MOSFET, Transistor TK50S04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK50S04K3L
1. Applications
• • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (m Toshiba Semiconductor mosfet | |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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