Datasheet TK50J30D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK50J30D	MOSFETs TK50J30D MOSFETs Silicon N-Channel MOS (π-MOS) TK50J30D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID	Toshiba Semiconductor

TK50J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK50J30D	MOSFETs TK50J30D MOSFETs Silicon N-Channel MOS (π-MOS) TK50J30D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3	Toshiba Semiconductor
TK50J60U	MOSFETs TK50J60U MOSFETs Silicon N-Channel MOS (DTMOS) TK50J60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) High forward transfer admittance: \|Yfs\| = 30 S (typ.) Low leakage current: IDSS = 1	Toshiba Semiconductor

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