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Datasheet TK4P60DB Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK4P60DB   MOSFETs

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P60DB Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK4P60DB pdf

TK4P6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK4P60D

MOSFETs

TK4P60D MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK4P60DB

MOSFETs

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P60DB Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK4P60DA

MOSFETs

TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P60DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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