Datasheet TK4A65DA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK4A65DA	Field Effect Transistor TK4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A65DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Charact	Toshiba Semiconductor

TK4A6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK4A60DA	Field Effect Transistor Silicon N-Channel MOS Type TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDS	Toshiba
TK4A60DB	Field Effect Transistor TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15 • �	Toshiba Semiconductor
TK4A60D	Switching Regulator Applications TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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