|
|
Datasheet TK4A60D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | TK4A60D | Switching Regulator Applications
TK4A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(π-MOSⅦ)
TK4A60D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDS |
 Toshiba Semiconductor |
 |
| 2 | TK4A60DA | Field Effect Transistor Silicon N-Channel MOS Type TK4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 60 |
 Toshiba |
|
| 1 | TK4A60DB | Field Effect Transistor TK4A60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DB
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15
• • • •
Low drain- |
Toshiba Semiconductor |
|
| Esta página es del resultado de búsqueda del TK4A60D. Si pulsa el resultado de búsqueda de TK4A60D se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |