Datasheet TK4A55DA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK4A55DA	Field Effect Transistor TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Charact	Toshiba Semiconductor

TK4A5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK4A50D	Field Effect Transistor TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) Low leakage current: IDSS = 10 μ	Toshiba Semiconductor
TK4A53D	Field Effect Transistor TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A53D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (T	Toshiba Semiconductor
TK4A55DA	Field Effect Transistor TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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