TK40E10N1
Toshiba Semiconductor
MOSFETsTK40E10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK40E10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100