Datasheet TK40A10K3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK40A10K3	Field Effect Transistor TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application • • • • Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)	Toshiba Semiconductor

TK40A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK40A10N1	MOSFETs TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode	Toshiba Semiconductor
TK40A10J1	Field Effect Transistor TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward t	Toshiba Semiconductor
TK40A10K3	Field Effect Transistor TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application • • • • Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 80 S Low leakage current: IDSS = 10 μA	Toshiba Semiconductor

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