TK3A65DA
Toshiba Semiconductor
Silicon N Channel MOS Type Field Effect TransistorTK3A65DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK3A65DA
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage cu
TK3A65D
MOSFETsTK3A65D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK3A65D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.93 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 65
Toshiba Semiconductor
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