Datasheet TK30A06J3A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK30A06J3A	Field Effect Transistor TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V	Toshiba Semiconductor

TK30A06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK30A06N1	MOSFETs TK30A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode	Toshiba Semiconductor
TK30A06J3A	Field Effect Transistor TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 34 S (typ.) Low leakage current: IDSS = 10	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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