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Datasheet TK18 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | TK18 | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s D |
 Dynex Semiconductor |
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| 5 | TK1810MK | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s D |
Dynex Semiconductor |
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| 4 | TK1812MK | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s D |
Dynex Semiconductor |
|
| 3 | TK18A30D | MOSFETs TK18A30D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK18A30D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID |
 Toshiba Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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