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Datasheet TK17A65U Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK17A65U   MOSFETs

TK17A65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK17A65U pdf

TK17A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK17A65U

MOSFETs

TK17A65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK17A65W

MOSFETs

TK17A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement m
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK17A65W5

MOSFETs

TK17A65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structur
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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SPS122

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