Datasheet TK13A50DA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK13A50DA	Field Effect Transistor TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max)	Toshiba Semiconductor

TK13A5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK13A50D	Field Effect Transistor TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A • • • • Low drain-source O	Toshiba
TK13A50DA	Field Effect Transistor TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current:	Toshiba Semiconductor
TK13A55DA	Field Effect Transistor TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Rating	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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