Datasheet TK12J55D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK12J55D	Field Effect Transistor TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12J55D Switching Regulator Applications 15.9 MAX. Unit: mm Ф3.2 ± 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain	Toshiba Semiconductor

TK12J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK12J60U	Switching Regulator Applications TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12J60U Switching Regulator Applications 15.9 MAX. Unit: mm 3.2 ± 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 ± 0.3 Characteristics Drain-source voltage Gate-source voltage DC Drain c	Toshiba Semiconductor
TK12J55D	Field Effect Transistor TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12J55D Switching Regulator Applications 15.9 MAX. Unit: mm Ф3.2 ± 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-	Toshiba Semiconductor
TK12J60W	MOSFETs TK12J60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12J60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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