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Datasheet TK12E60W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK12E60W   MOSFETs

TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3
Toshiba Semiconductor
Toshiba Semiconductor
datasheet TK12E60W pdf

TK12E Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK12E60W

MOSFETs

TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
TK12E60U

MOSFETs

TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 1
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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