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Datasheet TK12A55D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK12A55D   Field Effect Transistor

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK12A55D pdf

TK12A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK12A50D

Field Effect Transistor

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK12A60W

Field Effect Transistor

TK12A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK12A50E

MOSFETs

TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: V
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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 Sanken
Sanken		 PDF


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