파트넘버.co.kr TK12A50E 데이터시트 검색

TK12A50E 전자부품 데이터시트



TK12A50E 전자부품 회로 및
기능 검색 결과



TK12A50E  

Toshiba Semiconductor
Toshiba Semiconductor

TK12A50E

MOSFETs

TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V)




관련 부품 TK12A5 상세설명

TK12A55D  

  
Field Effect Transistor

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS =



Toshiba Semiconductor
Toshiba Semiconductor

PDF



TK12A53D  

  
Field Effect Transistor

TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A53D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VD



Toshiba Semiconductor
Toshiba Semiconductor

PDF



TK12A50D  

  
Field Effect Transistor

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V)



Toshiba Semiconductor
Toshiba Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처