TK12A50E
Toshiba Semiconductor
MOSFETsTK12A50E
MOSFETs Silicon N-Channel MOS (π-MOS)
TK12A50E
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V)
TK12A55D
Field Effect TransistorTK12A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK12A55D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS =
Toshiba Semiconductor
PDF
TK12A53D
Field Effect TransistorTK12A53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12A53D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VD
Toshiba Semiconductor
PDF
TK12A50D
Field Effect TransistorTK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12A50D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V)
Toshiba Semiconductor
PDF