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Datasheet TK11A65D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK11A65D   MOSFETs

TK11A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK11A65D pdf

TK11A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK11A65D

MOSFETs

TK11A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK11A65W

MOSFETs

TK11A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK11A65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.33 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement m
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK11A60D

Field Effect Transistor

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: I
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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SPS122

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