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Datasheet TK11A55D Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TK11A55D | Field Effect Transistor TK11A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK11A55D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (V |
Toshiba Semiconductor |
TK11A Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TK11A65D | MOSFETs |
Toshiba Semiconductor |
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TK11A65W | MOSFETs |
Toshiba Semiconductor |
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TK11A60D | Field Effect Transistor |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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