Datasheet TK100E08N1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TK100E08N1	MOSFETs TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0	Toshiba Semiconductor

TK100E0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TK100E08N1	MOSFETs TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mod	Toshiba Semiconductor
TK100E06N1	MOSFETs TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mod	Toshiba Semiconductor

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