TJ20A10M3
Toshiba Semiconductor
Field Effect TransistorTJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
TJ20A10M3
Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage cu