TIP147
Comset Semiconductors
(TIP145 - TIP147) NPN SILICON POWER DARLINGTONS TRANSISTORSTIP145 – TIP146 – TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS
They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and swi
TIP147
Motorola Semiconductors
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORSMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP140/D
Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ I
TIP147
Central Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSTIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transi
TIP147
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSTIP142, TIP147
Complementary power Darlington transistors
Features
■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode
Applications
■ Linear and switching industrial equipment
Description
The devices are manufactured
TIP147
ON Semiconductor
Darlington Complementary Silicon Power TransistorsTIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
Darlington Complementary Silicon Power Transistors
Designed for general−purpose amplifier and low frequency switching applications.
Features
• High DC Current Gain −
Min hFE = 1000 @ IC = 5.0
TIP147
Multicomp
Darlington TransistorsDarlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications
• Collector-Emitter sustaining voltage
VCEO (sus) = 60 V (Minimum) = 80 V (Minimum)
- TIP145 - TIP141, TIP146
= 100 V (Minimum) - TIP142, TIP14
TIP147
Fairchild Semiconductor
Monolithic Construction With Built In Base- Emitter Shunt ResistorsTIP145/146/147
TIP145/146/147
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142
1
TO-3P
PNP Epitaxial Silicon Darlington T