TIP107
Comset Semiconductors
(TIP105 - TIP107) Silicon PNP Darlington Power TransistorsSEMICONDUCTORS
PNP TIP105-106-107 SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NP
TIP107
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSTIP102 ® TIP107
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT s AUDIO
TIP107
Motorola Semiconductors
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORSMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP100/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ)
TIP107
TAITRON
Darlington PNP Power TransistorsDarlington Power Transistors (PNP) TIP105/106/107
Darlington Power Transistors (PNP)
Features
• Designed for general-purpose amplifier and low speed switching applications
• RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-220, Plastic Packag
TIP107
ON Semiconductor
Plastic Medium-Power Complementary Silicon TransistorsTIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
Plastic Medium-Power Complementary Silicon Transistors
Designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.
TIP107
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington TransistorTIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor
December 2014
TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 @
TIP107
SEMIHOW
PNP Epitaxial Silicon Darlington TransistorTIP105/106/107
TIP105/106/107
◎ SEMIHOW REV.A0,Oct 2007
TIP105/106/107
TIP105/106/107
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage -
TIP107
Unisonic Technologies
PNP EPITAXIAL TRANSISTORUNISONIC TECHNOLOGIES CO., LTD
TIP107
PNP SILICON TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP107 is designed for using in general purpose amplifier and switching applications.
FEATURES
* Low VCE(SAT) * High Current Gain * Complement