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TIP107  

Comset Semiconductors
Comset Semiconductors

TIP107

(TIP105 - TIP107) Silicon PNP Darlington Power Transistors

SEMICONDUCTORS PNP TIP105-106-107 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NP



TIP107  

STMicroelectronics
STMicroelectronics

TIP107

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP102 ® TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s AUDIO



TIP107  

Motorola Semiconductors
Motorola Semiconductors

TIP107

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ)



TIP107  

TAITRON
TAITRON

TIP107

Darlington PNP Power Transistors

Darlington Power Transistors (PNP) TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Packag



TIP107  

ON Semiconductor
ON Semiconductor

TIP107

Plastic Medium-Power Complementary Silicon Transistors

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.



TIP107  

Fairchild Semiconductor
Fairchild Semiconductor

TIP107

PNP Epitaxial Silicon Darlington Transistor

TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @



TIP107  

SEMIHOW
SEMIHOW

TIP107

PNP Epitaxial Silicon Darlington Transistor

TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage -



TIP107  

Unisonic Technologies
Unisonic Technologies

TIP107

PNP EPITAXIAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD TIP107 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications.  FEATURES * Low VCE(SAT) * High Current Gain * Complement



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