TIM7785-8SL
Toshiba
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM7785-8SL
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GH