TIM7785-4UL
Toshiba Semiconductor
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM7785-4UL
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PA