TIM5964-6UL
Toshiba Semiconductor
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-6UL
TECHNICAL DATA FEATURES
HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PA
TIM5964-60SL
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-60SL
TECHNICAL DATA FEATURES
T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 5.9GHz to 6.4GHz T HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.4GHz T BROAD BAND INTERNA
Toshiba Semiconductor
PDF