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TIM5964-6UL 전자부품 데이터시트



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기능 검색 결과



TIM5964-6UL  

Toshiba Semiconductor
Toshiba Semiconductor

TIM5964-6UL

MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PA




관련 부품 TIM5964-6 상세설명

TIM5964-60SL  

  
MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-60SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 5.9GHz to 6.4GHz T HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.4GHz T BROAD BAND INTERNA



Toshiba Semiconductor
Toshiba Semiconductor

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