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Datasheet TIM5964-60SL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIM5964-60SL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-60SL
TECHNICAL DATA FEATURES
T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 5.9GHz to 6.4GHz T HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.4GHz T BROAD BAND INTERNA |
Toshiba Semiconductor |
TIM5964-6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIM5964-60SL | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM5964-6UL | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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