TIM5964-35SLA-251
Toshiba Semiconductor
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM5964-35SLA-251
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
HIGH EFFICI