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Datasheet TIM5964-35SLA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TIM5964-35SLA | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-35SLA
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTE |
 Toshiba Semiconductor |
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| 1 | TIM5964-35SLA-251 | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM5964-35SLA-251
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz HIGH |
Toshiba Semiconductor |
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