TIM4450-8SL
Toshiba Semiconductor
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz
TIM4450-8SL PRELIMINARY
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SE