TIM1414-2
Toshiba
Microwave Power GaAs FET
TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • H
TIM1414-2-252
Toshiba
Microwave Power GaAs FET
DataShee
partnumber.co.krom
partnumber.co.krom
partnumber.co.krom DataSheet 4 U .com
et4U.com
partnumber.co.krom
partnumber.co.krom
partnumber.co.krom DataSheet 4 U .com