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Datasheet TIM1414-10LA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TIM1414-10LA | Microwave Power GaAs FET
TOSHIBA
MICROWAVE POWER GaAs FET
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched � |
 Toshiba |
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| 1 | TIM1414-10LA-252 | Microwave Power GaAs FET
TOSHIBA
Oct. 1999
TIM1414-10LA-252
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G |
Toshiba |
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