TIM1011-8L 전자부품 데이터시트

TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-5L HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIF

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIF