TIC246N
Comset Semiconductors
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTORSEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • • • High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA
TIC246N
Power Innovations Limited
SILICON TRIACSTIC246 SERIES SILICON TRIACS
Copyright © 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000
G G G G G G
High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1
TIC246N
M&G Electronic
TIRISTORITIRISTORI I TRIJACI
TIR
TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
UDRM ITAV
IGT
Tip Cena URRM
Case
(V) (A) (mA)
BT136
1,20 600 4
20 TO220C
BT137
1,50 600 8
20 TO220C
BT138
1,80 600 12 30 TO220C
TO220C
BT139
TIC246N
Inchange Semiconductor
TriacsINCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC246N
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM VRRM IT(RM