TIC226M
Comset Semiconductor
SILICON BIDIRECTIONAL TRIODE THYRISTORSEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3
TIC226M
Power Innovations Limited
SILICON TRIACSTIC226 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
q q q q
8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
1 2 3 TO-220 PACKAGE
TIC226M
Loras Industries
Silicon Triacs
TIC226 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
q q q q
8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
TIC226M
M&G Electronic
TIRISTORITIRISTORI I TRIJACI
TIR
TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
UDRM ITAV
IGT
Tip Cena URRM
Case
(V) (A) (mA)
BT136
1,20 600 4
20 TO220C
BT137
1,50 600 8
20 TO220C
BT138
1,80 600 12 30 TO220C
TO220C
BT139
TIC226M
Inchange Semiconductor
TriacsINCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC226M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM VRRM IT(RM