TIC126N
Comset Semiconductors
(TIC126x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORSSEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-Sta
TIC126N
Power Innovations Limited
SILICON CONTROLLED RECTIFIERSTIC126 SERIES SILICON CONTROLLED RECTIFIERS
Copyright © 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000
G G G G G
12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 m
TIC126N
Inchange Semiconductor
ThyristorsINCHANGE Semiconductor
isc Thyristors
isc Product Specification
TIC126N
APPLICATIONS ·12A contimunous on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM VRRM IT(AV) IT(RMS)
TIC126N
M&G Electronic
TIRISTORITIRISTORI I TRIJACI
TIR
TIRISTORI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
TIRISTORI 1 - 50A
UDRM ITAV IGT
Tip Cena URRM
Case
(V) (A) (mA)
CS45-16IO1 38,00 1600 75 40 TO247
KT206
2,50 400 4 10 TO220A
KT503
2,00 200 1 10 TO3