TH58NVG5S0FTA20
Toshiba Semiconductor
32 GBIT (4G X 8 BIT) CMOS NAND E2PROMTOSHIBA CONFIDENTIAL
TENTATIVE
TH58NVG5S0FTA20
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
32 GBIT (4G × 8 BIT) CMOS NAND E PROM DESCRIPTION
The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Progra
TH58NVG5S0FTAK0
32 GBIT (4G x 8 BIT) CMOS NAND E2PROMTH58NVG5S0FTAK0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32 GBIT (4G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64
Toshiba Semiconductor
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