파트넘버.co.kr TH58NVG3S0HBAI6 데이터시트 검색

TH58NVG3S0HBAI6 전자부품 데이터시트



TH58NVG3S0HBAI6 전자부품 회로 및
기능 검색 결과



TH58NVG3S0HBAI6  

Toshiba
Toshiba

TH58NVG3S0HBAI6

8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2P




관련 부품 TH58NVG3S0HBA 상세설명

TH58NVG3S0HBAI4  

  
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI4 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes



Toshiba
Toshiba

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