TH58NVG3S0HBAI6
Toshiba
8G-BIT (1G x 8 BIT) CMOS NAND E2PROMTH58NVG3S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2P
TH58NVG3S0HBAI4
8 GBIT (1G x 8 BIT) CMOS NAND E2PROMTH58NVG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG3S0HBAI4 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes
Toshiba
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