TH58BVG3S0HTA00
Toshiba
8 GBIT (1G x 8 BIT) CMOS NAND E2PROMTH58BVG3S0HTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PR
TH58BVG3S0HTAI0
8 GBIT (1G x 8 BIT) CMOS NAND E2PROMTH58BVG3S0HTAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HTAI0 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 6
Toshiba
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